An ultrathin buried Si layer in GaAs studied by soft X-ray emission spectroscopy and surface X-ray diffraction: theory and experiment

P.O. Nilsson1, S. Mankefors1, E. Lundgren2

1Department of Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden
2Institut für Allgemeine Physik, Technische Universität Wien, A-1040 Wien, Austria

J. Alloys Comp. 286 (1999) 31-36

A buried Si(100) monolayer in GaAs has been investigated by soft X-ray emission spectroscopy (SXE) and surface X-ray diffraction (SXD). In both cases the data were analyzed by computations. The SXE spectra were compared to ab-initio results for several different atomic geometries. An optimal fit was found for 63% Si in Ga-sites according to these calculations, while SXD indicates a somewhat lower value. Details on the electronic structure were also extracted.

Correspondence to: P.O. Nilsson.