Semiconductor-half metal transition at the Fe3O4(001) surface upon hydrogen adsorption

G.S. Parkinson1,2, N. Mulakaluri3,4, Y. Losovyj5, P. Jacobson1,2, R. Pentcheva3, and U. Diebold1,2

1 Department of Physics, Tulane University, New Orleans, Louisiana 70118, USA
2 Institut für Angewandte Physik, Technische Universität Wien, 1040 Wien, Austria
3 Department of Earth and Environmental Sciences, University of Munich, 80333 Munich, Germany
4 Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin, Germany
5 Center for Advanced Microstructures and Devices, Louisiana State University, Baton Rouge, Louisiana 70806, USA

Phys. Rev. B 82 (2010) 125413

The adsorption of H on the magnetite (001) surface was studied with photoemission spectroscopies, scanning tunneling microscopy, and density-functional theory. At saturation coverage the insulating (√2 × √2)R45° reconstruction is lifted and the surface undergoes a semiconductor-half metal transition. This transition involves subtle changes in the local geometric structure linked to an enrichment of Fe2+ cations at the surface. The ability to manipulate the electronic properties by surface engineering has important implications for magnetite-based spintronic devices.

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Corresponding author: Ulrike Diebold (diebold< encoded email address >).
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